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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943C RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * Maximum Available Gain = 17dB @ 300MHz High fT - 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC D TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Storage Temperature Value 30 40 3.5 400 1.0 -65 to +150 Unit V V V mA W P C Thermal Data R TH(J-C) Thermal Resistance, Junction - Case 125 C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF5943C ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 STATIC Symbol BVCEO BVCBO BVEBO ICBO ICEO hFE IC = 5 ma IB = 0 IC = 0.1 mA, IE = 0 IE = 0.1 mA, IC = 0 VCB = 15 V, VBE = 0 V VCE = 20 V, VBE = 0 V IC = 50 mA, VCE = 15 V Test Conditions Value Min. 30 40 3.5 25 Typ. Max. 50 10 300 Unit V V V A A DYNAMIC Symbol Ftau NF Test Conditions Current-Gain Bandwidth Product (IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz) IC = 35 mA IC = 10 mA VCE = 15 V VCE = 15 V f = 200 MHz f = 200 MHz Value Min. Typ. 1.2 5.5 12 Max. Unit GHz dB dB G U max Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF5943C PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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